Electronic Component's Source

The BH1416F is a FM stereo transmitter IC that transmits simple configuration. The IC consists of a stereo modulator for generating stereo composite signals and a FM transmitter for broadcasting a FM signal on the air. The stereo modulator generates a composite signal which consists of the MAIN, SUB, and pilot signal from a 38kHz oscillator. The FM transmitter radiates FM wave on the air by modulating the carrier signal with a composite signal.

Applications:
Wireless speakers, Personal computer (sound board), Game machine, CD changer, Car TV, Car navigation.

BLF 244 & BLF 245 MATCHED PAIR BY PHILIPPINES

• FREQUENCY: DC - 6 GHz
• POWER: 60 Watts
• RESISTANCE VALUE: 50 Ohms
• V.S.W.R.: 1.25: 1 

• FREQUENCY: DC - 500 MHz
• POWER: 800 Watts
• RESISTANCE VALUE: 50 Ohms
• V.S.W.R.: 1.50 : 1 

• Resistance: 50 ohms
• Power (W): 250
• Frequency (GHz): 1
• Operating Temperature: -55 to +150C

• Resistance: 50 ohms
• Power (W): 150
• Frequency (GHz): 2
• Operating Temperature: -55 to +150C

Attenuation Value: 20 dB, ± 1.0 dB, DC – 4.0GHz

Input-Output: 50 Ohm

Power: 100 Watts

Frequency Range: DC – 4.0 GHz

Return Loss > 24 dB to 2.7 GHz, > 20 dB to 4.0 GHz

The TDA1521 is a dual hi-fi audio power amplifier encapsulated in a 9-lead plastic power package. The device is especially designed for mains fed applications (e.g. stereo tv sound and stereo radio).

 FEATURES

• Requires very few external components
• Input muted during power-on and off (no switch-on or switch-off clicks)
• Low offset voltage between output and ground
• Excellent gain balance between channels
• Hi-fi according to IEC 268 and DIN 45500
• Short-circuit-proof
• Thermally protected

This line of epitaxial silicon NPN-planar transistor is designed priority for VHF mobile and marine transmitters.

• Frequency: 175MHz 
• Voltage: 25V
• Power Out: 15W
• High Power Gain: 6.5dB
• High Efficiency
• FM Class C Transistor
• Common Emitte

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 28/32 volt transmitter equipment. Typical Two-Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture

• Output Power . 130 Watts PEP
• Power Gain . 17.3 dB
• Efficiency . 41%
• IMD . -32.5 dBc

Capable of Handling 10:1 VSWR @ 32 Vdc, 857 MHz, 130 Watts CW Output Power
Features

• Integrated ESD Protection
• Excellent Thermal Stability
• Characterized with Differential Large-Signal Impedance Parameters
• RoHS Compliant

DESCRIPTION:
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties. The transistor has a 1¤4" capstan envelope with ceramic cap.

This MC145028 decoder treats all nine trinary digits as an address which allows 19,683 codes. If binary data is encoded, 512 codes are possible. The VT output goes high on the MC145028 when two addresses are consecutively received (in one encoding sequence) which both match the local address.

• Operating Temp. Range: – 40 to + 85°C
• Interfaces with RF, Ultrasonic, or Infrared Modulators and Demodulators
• RC Oscillator, No Crystal Required
• High External Component Tolerance; Can Use ± 5% Components
• Internal Power–On Reset Forces All Decoder Outputs Low
• MC145028 = 4.5 to 18 V
• Low–Voltage Versions Available:
• SC41344 = 2.8 to 10 V Version of the MC145028
• For Infrared Applications, See Application Note AN1016/D

DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

FEATURES
High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band

APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.

This is a monolithic integrated circuit for vision and sound IF signal processing in TV and VTR sets and multimedia front-ends.

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

• Guaranteed Performance at 30 MHz, 50 V: Output Power -150 W, Gain- 18 dB (22 dB Typ), Efficiency - 40%
• Typical Performance at 175 MHz, 50 V: Output Power -150 W, Gain -13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability